Measurement of the quasi-static C-V curves of an MIS structure in the presence of charge leakageMONDERER, B; LAKHANI, A. A.Solid-state electronics. 1985, Vol 28, Num 5, pp 447-451, issn 0038-1101Article

A simple method of modelling the C-V profiles of high-low junctions and heterojunctionsMISSOUS, M; RHODERICK, E. H.Solid-state electronics. 1985, Vol 28, Num 3, pp 233-237, issn 0038-1101Article

Capacitance-voltage measurements of Au-Ge-Sn structure at liquid nitrogen temperatureSERIN, N.Journal of Technical Physics. 1983, Vol 24, Num 1, pp 121-125, issn 0324-8313Article

CAPACITANCE-VOLTAGE CHARACTERISTICS OF AL/AL₂O₃/P-GAAS METAL-OXIDE-SEMICONDUCTOR DIODESHAYASHI H; KIKUCHI K; YAMAGUCHI T et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 404-406; BIBL. 23 REF.Article

Caractéristiques capacité-tension sous-linéaires des jonctions p-n abruptes asymétriquesKONSTANTINOV, O. V; MEZRIN, O. A; EGOROV, B. V et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 9, pp 1589-1596, issn 0015-3222Article

Numerical solution of Poisson's equation with application to C-V analysis of III-V heterojunction capacitorsGRAY, J. L; LUNDSTROM, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 2102-2109, issn 0018-9383Article

Simple formulas for analysis of C-V characteristics of MIS capacitorJAKUBOWSKI, A; INIEWSKI, K.Solid-state electronics. 1983, Vol 26, Num 8, pp 755-756, issn 0038-1101Article

Capacité négative d'un semiconducteur photosensibleALIMPIEV, V. N; GURAL'NIK, I. P.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 4, pp 676-679, issn 0015-3222Article

Effect of semiconductor thickness on capacitance-voltage characteristics of an MOS capacitorNAGAI, K; HAYASHI, Y.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1659-1660, issn 0021-4922Article

EFFET DES ETATS LIMITROPHES SUR LES CARACTERISTIQUES ELECTROSTATIQUES DES STRUCTURES METAL-SEMICONDUCTEUR 1-DIELECTRIQUE-SEMICONDUCTEUR 2SYSOEV BI; BEZRYADIN NN; SYNOROV VF et al.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 4; PP. 355-361; BIBL. 8 REF.Article

VARICAP WITH STEPLIKE C-V CHARACTERISTICSPEYKOV PH.1978; C.R. ACAD. BULG. SCI.; BGR; DA. 1978; VOL. 31; NO 8; PP. 961-962; BIBL. 1 REF.Article

CAPACITANCE-VS-VOLTAGE CHARACTERISTICS OF ZNO VARISTORSMUKAE K; TSUDA K; NAGASAWA I et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4475-4476; BIBL. 14 REF.Article

Capacitance-voltage characteristics of GaAs-AlAs heterostructuresWOODWARD, T. K; SCHLESINGER, T. E; MCGILL, T. C et al.Applied physics letters. 1985, Vol 47, Num 6, pp 631-633, issn 0003-6951Article

Double-resonance technique for C/V measurements of semiconductor devicesDE COGAN, D; ALANI, A.Electronics Letters. 1985, Vol 21, Num 24, pp 1153-1154, issn 0013-5194Article

Determination of impurity distribution in p-type Si epitaxial layers by C-V analysis of Sm on p-type Si Schottky diodesMIKI, K; YOSHIDA, N.Japanese journal of applied physics. 1984, Vol 23, Num 5, pp L336-L338, issn 0021-4922, 2Article

Effect of AC and DC voltage on dielectric properties of CeO₂ filmsCHANDRA SHEKAR, M; HARI BABU, V.Crystal research and technology (1979). 1984, Vol 19, Num 12, pp 1649-1653, issn 0232-1300Article

Effects of leakage current on deep level transient spectroscopyCHEN, M. C; LANG, D. V; DAUTREMONT-SMITH, W. C et al.Applied physics letters. 1984, Vol 44, Num 8, pp 790-792, issn 0003-6951Article

Effect of relative humidity on current-voltage characteristics of Li-doped C uO/ZnO junctionTOYOSHIMA, Y; MIYAYAMA, M; YANAGIDA, H et al.Japanese journal of applied physics. 1983, Vol 22, Num 12, issn 0021-4922, 1933Article

Low-intensity differential photocapacitance of MOS structuresMOHAN CHANDRA, M; SURYAN, G.Solid-state electronics. 1983, Vol 26, Num 8, pp 731-737, issn 0038-1101Article

Formation of stable anodic oxides on the HBr:K₂Cr₂O₇:H₂O polished n-InPSUMATHI, R. R; DHARMARASU, N; ARULKUMARAN, S et al.SPIE proceedings series. 1998, pp 380-383, isbn 0-8194-2756-X, 2VolConference Paper

High field capacitance-temperature behavior of BaTiO₃ ceramic disc capacitorsCAMPBELL, C. K; VAN WYK, J. D; HOLM, M. F. K et al.IEEE transactions on components, hybrids, and manufacturing technology. 1990, Vol 13, Num 4, pp 1124-1127, issn 0148-6411Article

Interface states under LOCOS bird's beak regionMARCHETAUX, J. C; DOYLE, B. S; BOUDOU, A et al.Solid-state electronics. 1987, Vol 30, Num 7, pp 745-753, issn 0038-1101Article

The influence of quantization on the space-charge layer capacitance of Si in strong accumulationFRANTSUZOV, A. A; OKHONIN, S. A; POGOSOV, A. G et al.Physica status solidi. B. Basic research. 1986, Vol 136, Num 1, pp 241-249, issn 0370-1972Article

Photoemission measurements of graded barrier in thin silicon oxynitride filmsEMANUEL, M; FAIGON, A; SHAPPIR, J et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2285-2289, issn 0021-8979Article

Amorphous-crystallin e silicon isotype heterojunction: electrostatic potential distribution and C(V) curvesRUBINELLI, F; ALBORNOZ, S; BUITRAGO, R et al.Solid-state electronics. 1985, Vol 28, Num 8, pp 741-750, issn 0038-1101Article